Utilizing a MOS capacitor-type geometry offers a promising solution to significantly reduce leakage currents by 1-3 orders of magnitude . Recently, vertical 4H-SiC MOS capacitor detectors have been proven to achieve extraordinary energy resolution (0.4%@5486 keV), surpassing SBD detectors under the same process (0.8%@5486 keV) .
The Ni/SiO 2 /4H-SiC structure is evaluated as a charged particle radiation detector. The SiO 2 film of about 59 nm was prepared on n-type 4H-SiC films with a thickness of 30 μm by dry oxidation method, and the SiO 2 /4H-SiC interface were annealed with NO and N 2 respectively.
Recently, vertical 4H-SiC MOS capacitor detectors have been proven to achieve extraordinary energy resolution (0.4%@5486 keV), surpassing SBD detectors under the same process (0.8%@5486 keV) . The alpha spectroscopic studies of Ni/SiO 2 /4H-SiC MOS detectors are summarized in Table 1.
Design and Optimization of MOS Capacitor based Radiation …
This paper proposes a unique sensor for detecting total ionizing dose (TID) on metal–oxide–semiconductor (MOS) devices. The proposed capacitive radiation sensor is based on commercial 180 nm complementary metal-oxide semiconductor (CMOS) technology. The sensor parameters of 180 nm length (L) and 20 nm oxide thickness (TOX) have ...
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Comparative investigation of Co, Fe, Ni ion and protons radiation ...
3 · This paper presents a sensor based on commercial semi-conductor laboratory 180 …
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High-resolution radiation detection using Ni/SiO2/n-4H-SiC …
In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO2/n-4H-SiC MOS detectors not …
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Enhancing the radiation hardness of vertical 4H–SiC detectors by …
The radiation detection performances of the MOS and MS detectors were examined by the pulse height spectrum (PHS) acquired using a plutonium-239 (239 Pu) radioactive source, which emits α particles with three main energies, specifically α 1 = 5156, α 2 = 5144, and α 3 = 5105 keV with emission percentages of 71%, 17%, and 12% ...
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Quantum capacitance detector: A pair-breaking radiation detector …
We present a proposed design for a pair-breaking photodetector for far-infrared and submillimeter radiation. Antenna-coupled radiation generates quasiparticles in a superconducting absorber, the density of which are measured using a single Cooper-pair box.
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Gamma Radiation Detection Response of Pt/PZT/SRO Based Capacitor …
Radiation induced changes in the electrical properties of PbZrTiO 3 (PZT) thin films have been studied for dosimetry application. The radiation detection was based on radiation induced changes in the electrical properties under the influence of gamma radiation. Epitaxial heterostructure of ferroelectric PbZr 0.52 Ti 0.48</sub>O<sub>3</sub> …
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Effect of NO annealing on radiation detection performance of Ni/SiO
The geometry of Schottky barrier (SBD) is commonly used in 4H-SiC radiation detectors, whose intrinsic resolution is limited by poor signal-to-noise ratio due to high leakage currents [[6], [7], [8]]. Utilizing a MOS capacitor-type geometry offers a promising solution to significantly reduce …
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Potentiality of the Capacitor as Low-Cost Radiation Detector: A …
In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest...
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Design and Optimization of MOS Capacitor based Radiation
The proposed capacitive radiation sensor is based on commercial 180 nm complementary metal-oxide semiconductor (CMOS) technology. The sensor parameters of 180 nm length (L) and 20 nm oxide thickness (TOX) have been finalized based on simulation and mathematical analysis.
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High-resolution radiation detection using Ni/SiO
In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μ m thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO 2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air.
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Design and Optimization of MOS Capacitor based Radiation
The proposed capacitive radiation sensor is based on commercial 180 nm complementary …
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(a) Schematic of a Ni/SiO 2 /n-4H-SiC vertical MOS capacitor …
In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest ...
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Gamma Radiation Detection Response of Pt/PZT/SRO Based Capacitor …
The effect of gamma (γ-ray) irradiation on the intrinsic electrical behavior of the Lead Zirconate Titanate (PZT) capacitor devices were explored in form of the current-voltage (I-V) and capacitance-voltage (C-V) properties. The PZT devices were exposed to a 60 Co Gamma source with 2.8 kGy/h dose rate from 0 kGy to 400 kGy doses.
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Enhancing the radiation hardness of vertical 4H–SiC detectors by …
High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor J. Appl. Phys., 130 ( 2021 ), Article 074501, 10.1063/5.0059151 View in Scopus Google Scholar
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Effect of NO annealing on radiation detection performance of …
The geometry of Schottky barrier (SBD) is commonly used in 4H-SiC radiation detectors, whose intrinsic resolution is limited by poor signal-to-noise ratio due to high leakage currents [[6], [7], [8]]. Utilizing a MOS capacitor-type geometry offers a promising solution to significantly reduce leakage currents by 1-3 orders of magnitude [9].
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Materials innovation and electrical engineering in X-ray detection
X-ray detection is critical for applications in medical diagnosis, industrial inspection, security checks, scientific inquiry and space exploration. Recent advances in materials science ...
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High-resolution radiation detection using Ni/SiO2/n-4H-SiC …
In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20μm thick n-4H-SiC epitaxial layers with the highest ...
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Gamma Radiation Detection Response of Pt/PZT/SRO Based …
The effect of gamma (γ-ray) irradiation on the intrinsic electrical behavior of …
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Comparative investigation of Co, Fe, Ni ion and protons radiation ...
3 · This paper presents a sensor based on commercial semi-conductor laboratory 180 nm complementary metal–oxide–semiconductor technology. Sensor can detect total ionizing dose on metal–oxide–semiconductor devices. Simulation and mathematical study determined the sensor optimized oxide thickness at 20 nm. Sensor radiation doses range from 100 rad to 1 Mrad, …
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(PDF) High-resolution radiation detection using …
In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest ...
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