Photovoltaic cell electroplating process low nickel

Does electroplating reduce silver consumption in tunnel oxide passivated contact solar cells?

However, despite its effectiveness in reducing silver consumption, a significant challenge arises from suboptimal electrical contact between metal electrodes and the polycrystalline silicon films, limiting the application of electroplating techniques in tunnel oxide passivated contact (TOPCon) solar cells (SCs).

Is electroplating a selective process?

In fact, the potential difference for electroplating of the silver-based seed layer and the GaAs cap is so small that metal is often not only deposited on the seed but also on the cap layer. Therefore, even at low current densities, the plating process is assessed to be insufficiently selective.

What is the pF value for solar cell metallization?

For the manufacturing of solar cells, a more conservative value pf = 0.9 mm was chosen as described further below (see vertical dashed line in Fig. 5 a). A conversion efficiency loss of only 0.4% rel is expected when changing metallization from photolithographically structured evaporated contacts to mask and plate nickel grids while retaining pf.

Does low-temperature electroplating improve FF?

In contrast, a TOPCon SC with an electrode deposition temperature of 35°C shows a relatively poor PCE of 22.62%, a Voc of 703.9 mV, a Jsc of 41.90 mA/cm 2, and an FF of 76.79%. A comparative analysis of the performance parameters of devices reveals that low-temperature electroplating markedly enhances FF.

Can mask and plate metallization transform photovoltaic processing?

Considering cost and scaling potential, mask and plate has the potential to transform the processing of any III–V-based photovoltaic device. In III–V solar cell manufacturing, mask and plate front metallization follows MOVPE growth and replaces both a photolithography and an evaporation process sequence.

What is the metallization potential of a champion mask and plate solar cell?

The champion mask and plate solar cell achieves η =  (31.6 ± 1.1) %. This clearly demonstrates the great potential of this metallization approach for III–V//Si solar cells. Besides that, the present work identifies optimization potential for the mask and plate approach. An even higher performance is expected from grid optimizations.